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STGYA120M65DF2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3 Exposed Pad
- Description: TRENCH GATE FIELD-STOP IGBT, M S
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STGYA120M65DF2 Specifications:
- MfrPart.: STGYA120M65DF2
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP IGBT, M S
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: M
- PartStatus: Active
- IGBTType: NPT, Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 160 A
- Current-CollectorPulsed(Icm): 360 A
- Vce(on)(Max)@VgeIc: 1.95V @ 15V, 120A
- Power-Max: 625 W
- SwitchingEnergy: 1.8mJ (on), 4.41mJ (off)
- InputType: Standard
- GateCharge: 420 nC
- Td(on/off)@25°C: 66ns/185ns
- TestCondition: 400V, 120A, 4.7Ohm, 15V
- ReverseRecoveryTime(trr): 202 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3 Exposed Pad
- STGYA120M65DF2 STMicroelectronics, TRENCH GATE FIELD-STOP IGBT, M S, Discrete Semiconductor Products~Transistors - IGBTs - Single
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