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STGWA100H65DFB2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3
- Description: TRENCH GATE FIELD-STOP, 650 V, 1
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STGWA100H65DFB2 Specifications:
- MfrPart.: STGWA100H65DFB2
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP, 650 V, 1
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: HB2
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 145 A
- Current-CollectorPulsed(Icm): 300 A
- Vce(on)(Max)@VgeIc: 2V @ 15V, 100A
- Power-Max: 441 W
- SwitchingEnergy: 2.2mJ (on), 1.4mJ (off)
- InputType: Standard
- GateCharge: 288 nC
- Td(on/off)@25°C: 30ns/130ns
- TestCondition: 400V, 100A, 2.2Ohm, 15V
- ReverseRecoveryTime(trr): 123 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3
- STGWA100H65DFB2 STMicroelectronics, TRENCH GATE FIELD-STOP, 650 V, 1, Discrete Semiconductor Products~Transistors - IGBTs - Single
STGWA100H65DFB2, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.
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