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STGW50H65DFB2-4 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-4
- Description: TRENCH GATE FIELD-STOP, 650 V, 5
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STGW50H65DFB2-4 Specifications:
- MfrPart.: STGW50H65DFB2-4
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP, 650 V, 5
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: HB2
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 86 A
- Current-CollectorPulsed(Icm): 150 A
- Vce(on)(Max)@VgeIc: 2V @ 15V, 50A
- Power-Max: 272 W
- SwitchingEnergy: 629µJ (on), 478µJ (off)
- InputType: Standard
- GateCharge: 151 nC
- Td(on/off)@25°C: 18ns/128ns
- TestCondition: 400V, 50A, 12Ohm, 15V
- ReverseRecoveryTime(trr): 92 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-4
- STGW50H65DFB2-4 STMicroelectronics, TRENCH GATE FIELD-STOP, 650 V, 5, Discrete Semiconductor Products~Transistors - IGBTs - Single
STGW50H65DFB2-4, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.
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