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STGP6M65DF2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-220-3
- Description: TRENCH GATE FIELD-STOP IGBT M SE
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STGP6M65DF2 Specifications:
- MfrPart.: STGP6M65DF2
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP IGBT M SE
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: M
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 12 A
- Current-CollectorPulsed(Icm): 24 A
- Vce(on)(Max)@VgeIc: 2V @ 15V, 6A
- Power-Max: 88 W
- SwitchingEnergy: 40µJ (on), 136µJ (off)
- InputType: Standard
- GateCharge: 21.2 nC
- Td(on/off)@25°C: 12ns/86ns
- TestCondition: 400V, 6A, 22Ohm, 15V
- ReverseRecoveryTime(trr): 140 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-220-3
- STGP6M65DF2 STMicroelectronics, TRENCH GATE FIELD-STOP IGBT M SE, Discrete Semiconductor Products~Transistors - IGBTs - Single
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