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STGP4M65DF2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-220-3
- Description: IGBT M SERIES 650V 4A LOW LOSS
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STGP4M65DF2 Specifications:
- MfrPart.: STGP4M65DF2
- Mfr: STMicroelectronics
- Description: IGBT M SERIES 650V 4A LOW LOSS
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: M
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 8 A
- Current-CollectorPulsed(Icm): 16 A
- Vce(on)(Max)@VgeIc: 2.1V @ 15V, 4A
- Power-Max: 68 W
- SwitchingEnergy: 40µJ (on), 136µJ (off)
- InputType: Standard
- GateCharge: 15.2 nC
- Td(on/off)@25°C: 12ns/86ns
- TestCondition: 400V, 4A, 47Ohm, 15V
- ReverseRecoveryTime(trr): 133 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-220-3
- STGP4M65DF2 STMicroelectronics, IGBT M SERIES 650V 4A LOW LOSS, Discrete Semiconductor Products~Transistors - IGBTs - Single
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