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STGF20H65DFB2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-220-3 Full Pack
- Description: TRENCH GATE FIELD-STOP 650 V, 20
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STGF20H65DFB2 Specifications:
- MfrPart.: STGF20H65DFB2
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP 650 V, 20
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: HB2
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 40 A
- Current-CollectorPulsed(Icm): 60 A
- Vce(on)(Max)@VgeIc: 2.1V @ 15V, 20A
- Power-Max: 45 W
- SwitchingEnergy: 265µJ (on), 214µJ (off)
- InputType: Standard
- GateCharge: 56 nC
- Td(on/off)@25°C: 16ns/78.8ns
- TestCondition: 400V, 20A, 10Ohm, 15V
- ReverseRecoveryTime(trr): 215 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-220-3 Full Pack
- STGF20H65DFB2 STMicroelectronics, TRENCH GATE FIELD-STOP 650 V, 20, Discrete Semiconductor Products~Transistors - IGBTs - Single
STGF20H65DFB2, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.
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