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STGB30H65DFB2 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Description: TRENCH GATE FIELD-STOP 650 V, 30
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STGB30H65DFB2 Specifications:
- MfrPart.: STGB30H65DFB2
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP 650 V, 30
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: HB2
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 650 V
- Current-Collector(Ic)(Max): 50 A
- Current-CollectorPulsed(Icm): 90 A
- Vce(on)(Max)@VgeIc: 2.1V @ 15V, 30A
- Power-Max: 167 W
- SwitchingEnergy: 270µJ (on), 310µJ (off)
- InputType: Standard
- GateCharge: 90 nC
- Td(on/off)@25°C: 18.4ns/71ns
- TestCondition: 400V, 30A, 6.8Ohm, 15V
- ReverseRecoveryTime(trr): 115 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- Package/Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- STGB30H65DFB2 STMicroelectronics, TRENCH GATE FIELD-STOP 650 V, 30, Discrete Semiconductor Products~Transistors - IGBTs - Single
STGB30H65DFB2, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.
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