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SCTW90N65G2V Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: HiP247™
- Description: SICFET N-CH 650V 90A HIP247
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SCTW90N65G2V Specifications:
- MfrPart.: SCTW90N65G2V
- Mfr: STMicroelectronics
- Description: SICFET N-CH 650V 90A HIP247
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: SiCFET (Silicon Carbide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 90A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 18V
- RdsOn(Max)@IdVgs: 25mOhm @ 50A, 18V
- Vgs(th)(Max)@Id: 5V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 157 nC @ 18 V
- Vgs(Max): +22V, -10V
- InputCapacitance(Ciss)(Max)@Vds: 3300 pF @ 400 V
- FETFeature: -
- PowerDissipation(Max): 390W (Tc)
- OperatingTemperature: -55°C ~ 200°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: HiP247™
- SCTW90N65G2V STMicroelectronics, SICFET N-CH 650V 90A HIP247, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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