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- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: HiP247™
- Description: SILICON CARBIDE POWER MOSFET 120
- COMPETITIVE PRICE and DELIVERY TIME
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SCTW40N120G2V Specifications:
- MfrPart.: SCTW40N120G2V
- Mfr: STMicroelectronics
- Description: SILICON CARBIDE POWER MOSFET 120
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- DraintoSourceVoltage(Vdss): 1200 V
- Current-ContinuousDrain(Id)@25°C: 36A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 18V
- RdsOn(Max)@IdVgs: 100mOhm @ 20A, 18V
- Vgs(th)(Max)@Id: 4.9V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 61 nC @ 18 V
- Vgs(Max): +22V, -10V
- InputCapacitance(Ciss)(Max)@Vds: 1233 pF @ 800 V
- FETFeature: -
- PowerDissipation(Max): 278W (Tc)
- OperatingTemperature: -55°C ~ 200°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: HiP247™
- SCTW40N120G2V STMicroelectronics, SILICON CARBIDE POWER MOSFET 120, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SCTW40N120G2V, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.

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