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SCTL90N65G2V Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: PowerFlat™ (8x8) HV
- Description: SILICON CARBIDE POWER MOSFET 650
- COMPETITIVE PRICE and DELIVERY TIME
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SCTL90N65G2V Specifications:
- MfrPart.: SCTL90N65G2V
- Mfr: STMicroelectronics
- Description: SILICON CARBIDE POWER MOSFET 650
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 40A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 18V
- RdsOn(Max)@IdVgs: 24mOhm @ 40A, 18V
- Vgs(th)(Max)@Id: 5V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 157 nC @ 18 V
- Vgs(Max): +22V, -10V
- InputCapacitance(Ciss)(Max)@Vds: 3380 pF @ 400 V
- FETFeature: -
- PowerDissipation(Max): 935W (Tc)
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: PowerFlat™ (8x8) HV
- SCTL90N65G2V STMicroelectronics, SILICON CARBIDE POWER MOSFET 650, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SCTL90N65G2V, ST authentic parts in stock from STMicroelectronics authorized distributors, order today, can ship immediately.
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